Fabrikasi dan Analisis Struktur Sel Surya Amorf Menggunakan Sistem PECVD

Soni Prayogi, Ayunis Ayunis, Yoyok Cahyono, Darminto Darminto

Abstract


Pada studi ini, telah dilakukkan pembuatan lapisan sel surya silikon amorf terhidrogenasi (a-Si:H) tipe p dengan menggunakan sistem PECVD pada subtrat kaca ITO. Deposisi yang dilakukan selama 30 menit dengan daya RF 3-Watt dan temperatur 2700C. Fabrikasi sel surya amorf menggunakanmetode ekperimen dengan mengalirkan gas silan (SiH4) 20 sccm dengan variasi laju gas Hidrogen (H2) dari 30 sccm sampai 70 sccm dan laju gas Boron (B2H6) 2 sccm dan 4 sccm. Hasil fabrikasi sel surya amorf mendapatkan ketebalan lapisan yang diukur dengan spektrometer (NanoCalc-2000) sebesar 302,8-324,0 nm. Dengan menggunakan pengukuran four-point probe didapatkan konduktivitas gelap 3,34 x 10-3 S/cm dan konduktivitas terang didapatkan 3,91 x 10-3 S/cm. Serta, hasil pengukuran menggunakan UV-VIS mendapatkan energi gap sebesar 1,7-1,8 eV. Fabrikasi lapisan sel surya amorf ini diharapkan dapat meningkatkan efisiensi sel surya berbasis a-Si: H.


Keywords


PECVD; Konduktivitas; Energi Gap; Sel Surya

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DOI: 10.30595/jrst.v7i2.16874

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